| PART |
Description |
Maker |
| D5017UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 50V - 175MHz SINGLE ENDED
|
Seme LAB
|
| D1003UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1005 D1005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab PLC
SEME-LAB[Seme LAB]
|
| MRF150 MRF150-15 |
RF Power FET
RF Power FET 150W, to 150MHz, 50V
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| 2SK1280 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W)
N-Channel MOS-FET(500V 0.5Ohm 18A 150W)
|
FUJI[Fuji Electric]
|
| M67741H 67741H M67741 |
RF POWER MODULE 150-175MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz /12.5V /30W / FM MOBILE RADIO
150-175MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
150-175MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68702H 68702H |
150-175MHz / 12.5V / 60W / FM MOBILE RADIO
From old datasheet system
RF POWER MODULE 150-175MHz, 12.5V, 60W, FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PH2729-150M |
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| NTE320F NTE320 |
Silicon NPN RF Power Transistor 40W @ 175MHz
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE472 |
Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE357 |
Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz
|
NTE Electronics
|
